Home / Products / IGBT module / 1200V
Feature
Typical Applications
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD600SGL120C2S |
Units |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC= 100℃ |
950 |
A |
|
600 |
|||
|
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
|
IF |
Diode Continuous Forward Current |
600 |
A |
|
IFM |
Diode Maximum Forward Current |
1200 |
A |
|
PD |
Maximum power Dissipation @ Tj= 175℃ |
3750 |
W |
|
TSC |
Short Circuit Withstand Time |
10 |
μs |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value, Diode |
VR=0V,t=10ms,Tj=125℃ |
74000 |
A2s |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
|
Mounting Torque |
Signal Terminal Screw:M4 |
1.1 to 2.0 |
|
|
Power Terminal Screw:M6 |
2.5 to 5.0 |
N.m |
|
|
Mounting Screw:M6 |
3.0 to 5.0 |
|
|
|
Weight |
Weight of Module |
300 |
g |
Electrical Characteristics of IGBT Tc=25℃ unless otherwise noted
Off Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
V(BR)CES |
Collector-Emitter Breakdown Voltage |
Tj=25℃ |
1200 |
|
|
V |
|
ICES |
Collector Cut-Off Current |
VCE=VCES,VGE=0V, Tj=25℃ |
|
|
5.0 |
mA |
|
IGES |
Gate-Emitter Leakage Current |
VGE=VGES,VCE=0V, Tj=25℃ |
|
|
400 |
nA |
On Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VGE(th) |
Gate-Emitter Threshold Voltage |
IC=24mA,VCE=VGE, Tj=25℃ |
5.0 |
6.2 |
7.0 |
V |
|
VCE(sat) |
Collector to Emitter Saturation Voltage |
IC=600A,VGE=15V, Tj=25℃ |
|
1.9 |
|
V |
|
IC=600A,VGE=15V, Tj= 125℃ |
|
2.1 |
|
Switching Characteristics
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=3Ω, VGE=±15 V, Tj=25℃ |
|
200 |
|
ns |
|
tr |
Rise Time |
|
62 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
510 |
|
ns |
|
|
tf |
Fall Time |
VCC=600V,IC=600A, RG=3Ω, VGE=±15 V, Tj=25℃ |
|
60 |
|
ns |
|
Eon |
Turn-On Switching Loss |
|
39 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
48 |
|
mJ |
|
|
td(on) |
Turn-On Delay Time |
VCC=600V,IC=600A, RG=3Ω,VGE= ±15 V, Tj= 125℃ |
|
210 |
|
ns |
|
tr |
Rise Time |
|
65 |
|
ns |
|
|
td(off) |
Turn-Off Delay Time |
|
600 |
|
ns |
|
|
tf |
Fall Time |
|
75 |
|
ns |
|
|
Eon |
Turn-On Switching Loss |
|
45 |
|
mJ |
|
|
Eoff |
Turn-Off Switching Loss |
|
60 |
|
mJ |
|
|
Cies |
Input Capacitance |
VCE=25V, f=1MHz, VGE=0V |
|
41.0 |
|
nF |
|
Coes |
Output Capacitance |
|
3.1 |
|
nF |
|
|
Cres |
Reverse Transfer Capacitance |
|
2.0 |
|
nF |
|
|
ISC |
SC Data |
tSC≤10μs,VGE=15V, Tj=125℃, VCC=900V, VCEM≤1200V |
|
2600 |
|
A |
|
LCE |
Stray inductance |
|
|
|
20 |
nH |
|
RCC’+EE ’ |
Module lead resistance, terminal to chip |
TC=25℃ |
|
0.18 |
|
mΩ |
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
|
VF |
Diode Forward Voltage |
IF=600A |
Tj=25℃ |
|
1.8 |
2.4 |
V |
|
Tj= 125℃ |
|
1.9 |
2.5 |
||||
|
Qr |
Diode Reverse Recovery Charge |
IF=600A, VR=600V, di/dt=-6000A/μs, VGE=- 15V |
Tj=25℃ |
|
65 |
|
μC |
|
Tj= 125℃ |
|
100 |
|
||||
|
IRM |
Diode Peak Reverse Recovery Current |
Tj=25℃ |
|
450 |
|
A |
|
|
Tj= 125℃ |
|
510 |
|
||||
|
Erec |
Reverse Recovery Energy |
Tj=25℃ |
|
35 |
|
mJ |
|
|
Tj= 125℃ |
|
42 |
|
||||
Thermal Characteristics
|
Symbol |
Parameter |
Typ. |
Max. |
Units |
|
RθJC |
Junction-to-Case (IGBT Part, per Module) |
|
0.04 |
℃/W |
|
RθJC |
Junction-to-Case (Diode Part, per Module) |
|
0.09 |
℃/W |
|
RθCS |
Case-to-Sink (Conductive grease applied) |
0.035 |
|
℃/W |
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